Session Co-Chairs : C. Fenouillet-Beranger (CEA-LETI, France) & J. A. Martino (University of Sao Paulo, Brazil)
› INVITED Paper: Nanowire/sheet-FETs for ultra-scaled, high-density logic and memory applications - Anabela Veloso, IMEC
14:00-14:40 (40min)
› Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs - Bogdan Cretu, Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen
14:40-14:20 (-1h-20)
› Impact Of Inter-Tier Coupling On Static And Noise Performance in 3D Sequential Integration Technology - Petros SIDERIS, Laboratoire d'Electronique et des Technologies de l'Information, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation
15:00-15:20 (20min)
› Improved Performance of InGaAs-on-Insulator MOSFETs on Si Using Optimized Annealing Schemes - Cezar Zota, IBM Zurich Research Laboratory
15:20-15:40 (20min)
Session Co-Chairs : C. Fenouillet-Beranger (CEA-LETI, France) & J. A. Martino (University of Sao Paulo, Brazil)
› Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs - Mingshan Liu, Forschungszentrum Jülich - Konstantin Mertens, Forschungszentrum Jülich - Nils Driesch, JARA-Institute Green IT, RWTH Aachen University, Forschungszentrum Jülich - Thomas Grap, RWTH Aachen University - stefan Trellenkamp, Helmholtz Nano Facility (HNF) - Jean-Michel Hartmann, CEA, LETI and University of Grenoble Alpes - Joachim Knoch, RWTH Aachen University - Dan Buca, Forschungszentrum Jülich - Qing-Tai Zhao, Forschungszentrum Jülich
16:00-16:20 (20min)
› In-situ thermal assist recovery thanks to active silicide source on NMOS transistor in FD-SOI technology - Philippe Galy, Stmicroelectronics
16:20-16:40 (20min)
› Optimization of GAA vertical nanowire performance for logic application - Terirama Thingujam, Jung-Hee Lee, In Man Kang, Yong Soo Lee, Jeong-Gil Kim, Dong-Hyeok Son
16:40-17:00 (20min)
› Thin Si channel Back Enhanced (BE) SOI pMOSFET photodetector under different bias conditions - José Augusto Padovese, University of Sao Paulo - Ricardo Cardoso Rangel, University of Sao Paulo - Kátia Regina Akemi Sasaki, University of Sao Paulo - Joao Antonio Martino, University of Sao Paulo
17:00-17:20 (20min)
› Reverse recovery current in virtual diodes - Kyung Hwa Lee, IMEP-LAHC, Grenoble Institute of Technology - Maryline Bawedin, IMEP-LAHC, Grenoble Institute of Technology - Sorin Cristoloveanu, IMEP-LAHC, Grenoble Institute of Technology
17:20-17:40 (20min)
› Thin film BIMOS transistor for low power spiking neuron cell in 28nm FD-SOI CMOS technology - Philippe Galy, Stmicroelectronics
17:40-18:00 (20min)
Session Co-Chairs : V. Sverdlov (TU Wien, Autria) & C. Sampedro (UGR, Spain)
› A 400 mV, wide band-VCO with the central Frequency of 10.5 GHz and FTR of 2.4 GHz, designed in 22nm FDSOI CMOS - Piyush Kumar, piyush Kumar
18:00-20:00 (2h)
› A fully automated RF measurement system enabling statistical analysis on 22nm FDSOI - Maximilian Jüttner, Hochschule für Technik und Wirtschaft [Dresden] - Tim Seiler, Hochschule für Technik und Wirtschaft [Dresden] - Luca Pirro, GLOBALFOUNDRIES Fab1 LLC&Co.KG - Michael Otto, GLOBALFOUNDRIES Fab1 LLC&Co.KG - Jan Hoentschel, GLOBALFOUNDRIES Fab1 LLC&Co.KG - Wilfried Klix, Hochschule für Technik und Wirtschaft [Dresden] - Roland Stenzel, Hochschule für Technik und Wirtschaft [Dresden]
18:00-20:00 (2h)
› Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature - Zongjie Shen, AI University Research Centre (AI-URC) - Chun Zhao, AI University Research Centre (AI-URC) - Cezhou Zhao, AI University Research Centre (AI-URC) - Ivona Mitrovic, Department of Electrical Engineering and Electronics - Li Yang, AI University Research Centre (AI-URC) - Wangying Xu, College of Materials Science and Engineering - Eng Lim, AI University Research Centre (AI-URC) - Tian Luo, AI University Research Centre (AI-URC) - Yanbo Huang, AI University Research Centre (AI-URC)
18:00-20:00 (2h)
› Back-gate bias Effect on the MOSFET-C CMOS UTBB Performance by Circuit Simulations - joaquin alvarado, Centro de Investigación en Dispositivos Semiconductores [Puebla]
18:00-20:00 (2h)
› Benefits of matrix configuration to implement a SET-FET circuit based on vertical topology - Esteve Amat, Institute of Microelectronics of Barcelona - Fabian Klüpfel, Fraunhofer Institute for Integrated Systems and Device Technology - Joan Bausells, Institute of Microelectronics of Barcelona - Francesc Perez-Murano, Institute of Microelectronics of Barcelona
18:00-20:00 (2h)
› Comparaison of Dickson Voltage Rectifier Designed in FDSOI 28 nm and BiCMOS 55 nm - Mohamad AWAD, Institut de Microelectronique, Electromagnetisme et Photonique
18:00-20:00 (2h)
› Comparison of the leakage currents in power supply bulk and SOI transistors: calculations and experiment - Vladimir Popov, A.V. Rzhanov Institute of Semiconductor Physics - Ida Tyschenko, A.V. Rzhanov Institute of Semiconductor Physics
18:00-20:00 (2h)
› Controlling L-BTBT in the Ultra-short channel Nanowire Junctionless Accumulation FETs using Overlapping Gate-on-Drain - AAKASH KUMAR JAIN, Indian Institute of Technology Delhi - Gaurav Musalgaonkar, Indian Institute of Technology Delhi - Mamidala Jagadesh Kumar, Indian Institute of Technology Delhi
18:00-20:00 (2h)
› Coplanar Dual Gates Silicon-on-insulator based Ultra-sensitive Ion-Sensitive Field-Effect Transistors for Point-of-Care Biosensor platform - Park Jong Tae, Incheon National University
18:00-20:00 (2h)
› Design and Performance of Silicon Nanowire Micro Thermoelectric Generators - Yusaku Shiotsu, FIRST, Tokyo Institute of Technology
18:00-20:00 (2h)
› Design of New Piezoelectronic Transistors and Their Ultralow-Voltage SRAM Application - Yusaku Shiotsu, Tokyo Institute of Technology - Shuu'ichirou Yamamoto, Tokyo Institute of Technology - Hiroshi Funakubo, Tokyo Institute of Technology - Minoru Kuribayashi Kurosawa, Tokyo Institute of Technology - Satoshi Sugahara, Tokyo Institute of Technology
18:00-20:00 (2h)
› Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation - Tianshi Zhao, University of Liverpool, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University - Chun Zhao, Department of Electrical Engineering and Electronics, University of Liverpool, AI University Research Centre (AI-URC), Xi'an Jiatong-Liverpool University, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University - Cezhou Zhao, University of Liverpool, AI University Research Centre (AI-URC) - Wangying Xu, Shenzhen Univerisity [Shenzhen] - Li Yang, Department of Chemistry, Xi'an Jiaotong-Liverpool University, Department of Chemistry, University of Liverpool - Ivona Mitrovic, Department of Electrical Engineering and Electronics, University of Liverpool - Steven Hall, Department of Electrical Engineering and Electronics, University of Liverpool - Enggee Lim, AI University Research Centre (AI-URC), University of Liverpool, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University - Shuichang Yu, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Department of Electrical Engineering and Electronics, University of Liverpool
18:00-20:00 (2h)
› Effective Reduction of the Programing Pulse Width in Al:HfO2-based RRAM Arrays - Óscar González, Universidad de Valladolid [Department of Electronics] - Eduardo Pérez, IHP GmbH - Leibniz Institute for Innovative Microelectronics - Christian Wenger, Brandenburg Medical School, IHP GmbH - Leibniz Institute for Innovative Microelectronics - Salvador Dueñas, Universidad de Valladolid [Department of Electronics] - Helena Castán, Universidad de Valladolid [Department of Electronics] - Héctor García, Universidad de Valladolid [Department of Electronics]
18:00-20:00 (2h)
› Encapsulation of mTEGs for on-body energy harvesting - Antonino Proto, Department of Cybernetics and Biomedical Engineering, VSB-TUO - Jan Jargus, Department of Telecommunications, VSB-TUO - Lukas Peter, Department of Cybernetics and Biomedical Engineering, VSB-TUO - Marek Penhaker, Department of Cybernetics and Biomedical Engineering, VSB-TUO
18:00-20:00 (2h)
› Equivalent Length Concept for Compact Modeling of Short-Channel GAA and DG MOSFETs - Kerim Yilmaz, TH Mittelhessen University of Applied Sciences - Ghader Darbandy, TH Mittelhessen University of Applied Sciences - Benjamin Iniguez, Universitat Rovira i Virgili - Francois Lime, Universitat Rovira i Virgili - Alexander Kloes, TH Mittelhessen University of Applied Sciences
18:00-20:00 (2h)
› Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology - Renan Lethiecq, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation, Stmicroelectronics - Maryline Bawedin, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation - Philippe Galy, Institut Interdisciplinaire dÍnnovation Technologique, Stmicroelectronics
18:00-20:00 (2h)
› First Principle Simulations of Current Flow in Inorganic Molecules: Polyoxometalates (POMs) - Paven Mathew, Center of Micro/Nano Manufacturing Technology
18:00-20:00 (2h)
› Improved Performance of MoS2 Transistors via Dual-gate and Electrostatically-doped Contacts - Fuyou Liao, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University - Yin Wang, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University - Lingyi Zong, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University - Zhongxun Guo, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University - Jing Wan, State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University - Wenzhong Bao, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University
18:00-20:00 (2h)
› InGaN/Si Hetero-Junction Tandem Solar Cell with Self Tunneling Effect: Proposal & Analysis - Nakka Laxmi, Indian Institute Information Technology Design and Manufacturing Kancheepuram - S R Routray, SRM Institute of Science and Technology - K P Pradhan, Indian Institute Information Technology Design and Manufacturing Kancheepuram
18:00-20:00 (2h)
› Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications - Tim Seiler, Hochschule für Technik und Wirtschaft [Dresden] - Maximilian Jüttner, Hochschule für Technik und Wirtschaft [Dresden] - Tom Herrmann, Globalfoundries - Alban Zaka, Globalfoundries - Luca Pirro, Globalfoundries - Jan Hoentschel, Globalfoundries - Wilfried Klix, Hochschule für Technik und Wirtschaft [Dresden] - Roland Stenzel, Hochschule für Technik und Wirtschaft [Dresden]
18:00-20:00 (2h)
› Lowering the Dark Count Rate of SPAD Implemented in CMOS FDSOI Technology - Tulio CHAVES DE ALBUQUERQUE, Institut des Nanotechnologies de Lyon - Site de l'INSA
18:00-20:00 (2h)
› New material design of fast switching phase change memory as the benchmark for FD-SOI devices - yongtae kim, Semiconductor Materials and Devices Lab
18:00-20:00 (2h)
› Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor - Carlos Augusto Bergfeld Mori, University of Sao Paulo
18:00-20:00 (2h)
› Pure boron monolayer to boost A2RAM performance - FRANCOIS TCHEME WAKAM, CEA-LETI AND UGA - JORIS LACORD, CEA-LETI - Maryline Bawedin, IMEP-LAHC - SEBASTIEN MARTINIE, CEA-LETI - Sorin Cristoloveanu, IMEP-LAHC - Thierry Poiroux, CEA-LETI
18:00-20:00 (2h)
› Rebound effect on Charged Based Bio-TFETs for different biomolecules - Christian Macambira, University of São Paulo - Paula Agopian, São Paulo State University - Joao Antonio Martino, University of Sao Paulo
18:00-20:00 (2h)
› Reliable operation of Z2-FET memory matrix without selector - yongtae kim, Semiconductor Materials and Devices Lab
18:00-20:00 (2h)
› Room-Temperature Anodic Oxidation of Siliocn-on-Insulator Structures Produced by Hydrogen Transfer - Ida Tyschenko, A.V. Rzhanov Institute of Semiconductor Physics - Igor Popov, A.V. Rzhanov Institute of Semiconductor Physics - Evgenij Spesivtsev, A.V. Rzhanov Institute of Semiconductor Physics - Vladimir Popov, A.V. Rzhanov Institute of Semiconductor Physics
18:00-20:00 (2h)
› Scaling Aspects of Nanowire Schottky Junction based Reconfigurable Field Effect Transistors - Tim Baldauf, University of Applied Sciences Dresden [HTW-Dresden] - André Heinzig, NaMLab gGmbH [Dresden], Chair of Nanoelectronic Materials [TU Dresden], Center for Advancing Electronics Dresden (CfAED) [TU Dresden] - Thomas Mikolajick, Center for Advancing Electronics Dresden (CfAED) [TU Dresden], Chair of Nanoelectronic Materials [TU Dresden], NaMLab gGmbH [Dresden] - Walter Michael Weber, NaMLab gGmbH [Dresden], Chair of Nanoelectronic Materials [TU Dresden], Center for Advancing Electronics Dresden (CfAED) [TU Dresden]
18:00-20:00 (2h)
› Series Resistance Effects on the Back-gate Biased Operation of Junctionless Transistors - Dae-Young Jeon, KIST Jeonbuk - So Jeong Park, Korea University [Seoul] - Mireille MOUIS, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation - Sylvain Barraud, Laboratoire dÉlectronique et des Technologies de l'Information - Gyu-Tae Kim, Korea University [Seoul] - Gérard Ghibaudo, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
18:00-20:00 (2h)
› Simple method for determining channel doping concentration of highly doped FD-SOI devices - So Jeong Park, Korea University - Dae-Young Jeon, KIST Jeonbuk - Gyu-Tae Kim, Korea University [Seoul]
18:00-20:00 (2h)
› Simulations of Surface Transfer Doping of Hydrogenated Diamond by MoO3 metal oxide - Vihar Georgiev, University of Glasgow
18:00-20:00 (2h)
› TCAD Analysis of III-V capacitor-less A2RAM cells - Carlos Navarro, University of Granada - Santiago Navarro, University of Granada - Carlos Marquez, University of Granada - Francisco Gamiz, University of Granada
18:00-20:00 (2h)
› TCAD Simulation of Total Ionizing Dose Response on DSOI nMOSFET - Yang Huang, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Binhong Li, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Sorin Cristoloveanu, CNRS, IMEP - INP Grenoble MINATEC - Bo Li, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Chen Shen, Cogenda Corporation - Yanfu Song, Cogenda Corporation - Lei Wang, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Duoli Li, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Hainan Liu, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Zhengsheng Han, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Jiajun Luo, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences
18:00-20:00 (2h)
› The effect of a damaged surface layer on the conductivity of Si nanowires made by direct plasma etching on SOI wafer - Andrey Miakonkikh, Valiev Institute of Physics and Technology of Russian Academy of Sciences - Konstantin Rudenko, Valiev Institute of Physics and Technology of Russian Academy of Sciences - Alexander Rogozhin, Valiev Institute of Physics and Technology of Russian Academy of Sciences - Andrey Tatarintsev, Valiev Institute of Physics and Technology of Russian Academy of Sciences
18:00-20:00 (2h)
› Ultra-thin HfAlO Nanofilms on Graphene Directly Deposited by Atomic Layer Deposition - Liu Shaoyu, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - LI ZHENG, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - Cheng Xinhong, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - Zhang Dongliang, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - Zhou Wen, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - Liu Xiaobo, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - Yu Yuehui, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
18:00-20:00 (2h)
› Vertical nanowire-based FET modelling and electrical optimization - Alberto del Moral, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC) - Esteve Amat, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC) - Joan Bausells, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC) - Francesc Perez-Murano, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC)
18:00-20:00 (2h)
Session Co-Chairs : Y. T. Kim (KIST, Korea) & P. Palestri (University of Udine, Italy)
› INVITED Paper: SOI Technology: From Niche to Mainstream Applications - Ionut Radu, SOITEC
09:00-09:40 (40min)
› Effect of reduced oxygen partial pressure SiGe condensation for the fabrication of ultra-thin SGOI substrates - Damien Valenducq, Grenoble Institute of Engineering, STMicroelectronics [Crolles] - Olivier Gourhant, STMicroelectronics [Crolles] - Elisabeth Blanquet, Grenoble Institute of Engineering - Fabien Deprat, STMicroelectronics [Crolles] - Francesco Abbate, STMicroelectronics [Crolles] - Veronique Guyader, STMicroelectronics [Crolles] - Sebastien Pelissier, STMicroelectronics [Crolles] - Denis Rouchon, Commissariat à l\'Énergie Atomique et aux Énergies Alternatives (CEA) - Grenoble
09:40-10:00 (20min)
› UTBOX SOI Structures with High-k Stacks of Hafnia and Alumina - Vladimir Popov, Rzhanov Institute of Semiconductor Physics SB RAS - Vladimir Vdovin, Rzhanov Institute of Semiconductor Physics - Anton Gutakovski, Rzhanov Institute of Semiconductor Physics
10:00-10:20 (20min)
› Behavior of Gold-Doped Silicon Substrate under Small- and Large-RF Signal - Massinissa Nabet, Institute of Information and Communication Technologies, Electronics and Applied Mathematics - Martin Rack, Institute of Information and Communication Technologies, Electronics and Applied Mathematics - C. H. (Kees) de Groot, School of Electronics and Computer Science - Jean-Pierre Raskin, Institute of Information and Communication Technologies, Electronics and Applied Mathematics
10:40-11:00 (20min)
› Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route - Qihan Liu, University of Liverpool - Chun Zhao, AI University Research Centre (AI-URC), University of Liverpool - Cezhou Zhao, AI University Research Centre (AI-URC), University of Liverpool - Ivona Mitrovic, University of Liverpool - Steven Hall, University of Liverpool - Wangying Xu, Shenzhen University [Shenzhen] - Li Yang, University of Liverpool - Eng Lim, University of Liverpool
11:00-11:20 (20min)
› Post-process porous silicon for 5G applications - Gilles Scheen, Université Catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics
11:20-11:40 (20min)
› Ni,Pt, and Ti Stanogermanide formation on Ge0.92Sn0.08 - Emmanuele Galluccio, Tyndall National Insitute - Gioele Mirabelli, Tyndall National Institute - Dan O'Connell, Tyndall National Institute - Jessica Doherty, School of Chemistry University College Cork - Nikolay Petkov, Cork Institute of Technology - Shih-Ya Lin, National Taiwan University - Fang-Liang Lu, National Taiwan University - Chee Wee Liu, National Taiwan University - Ray Duffy, Tyndall National Institute - Justin Holmes, Trinity College Dublin, School of Chemistry University College Cork
11:40-12:00 (20min)
Session 3: Characterization techniques and reliability assessment techniques (Part 1)
Session Co-Chairs : V. Kilchytska (UCLouvain, Belgium) & C. Theodorou (IMEP-LAHC)
› INVITED Paper: Radiation Effects in Innovative Devices - Marc Gaillardin, CEA-DIF
14:00-14:40 (40min)
› Back-bias impact on variability and BTI for 3D-monolithic 14nm FDSOI SRAMs applications - Daphnée Bosch, Laboratoire d'Electronique et des Technologies de l'Information - JORIS LACORD, CEA-LETI
14:40-15:00 (20min)
› Pseudo-MOSFET response to transient ramp signal applied to the gate - Miltiadis ALEPIDIS, IMEP-LAHC - Maryline Bawedin, IMEP-LAHC - Irina IONICA, IMEP-LAHC
15:00-15:20 (20min)
› RF characterization and small extraction on 22 nm CMOS fully-depleted SOI technology - Ousmane Kane, CEA leti - Luca Lucci, CEA leti - Pascal Scheiblin, CEA leti - Sylvie Lepilliet, IEMN - Francois Danneville, IEMN
15:20-15:40 (20min)
Session 3: Characterization techniques and reliability assessment techniques (Part 2)
Session Co-Chairs : V. Kilchytska (UCLouvain, Belgium) & C. Theodorou (IMEP-LAHC)
› Robust Methodology for Low-Frequency Noise Power Analyses in Advanced MOS Transistors - Léopold Van Brandt, ICTEAM, Université catholique de Louvain
16:00-16:20 (20min)
› New Methodology For Series-Resistance-Immune MOSFET Parameter Extraction From Linear To Saturation Region - Theano Karatsori, IMEP-LAHC, Univ. Grenoble Alpes, - Kamal Bennamane, University of M. Mammeri, Tizi-Ouzou, Algeria - Gérard Ghibaudo, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
16:20-16:40 (20min)
› RF Characterization of 28 nm FD-SOI Transistors Up To 220 GHz - Marina DENG, Laboratoire de l'intégration, du matériau au système - Sébastien Fregonese, Laboratoire de l'intégration, du matériau au système - Benjamin Dormieu, STMicroelectronics (Crolles) - Patrick Scheer, STMicroelectronics (Crolles) - Magali De Matos, Laboratoire de l'intégration, du matériau au système - Thomas Zimmer, Laboratoire de l'intégration, du matériau au système
16:40-17:00 (20min)
› gm/ID-derivative Method for Threshold Voltage Extraction in Junctionless MOSFETs - Alexei Nazarov, Lashkaryov Institute of Semiconductor Physics NASU
17:00-17:20 (20min)
› Electrical characterization and size effect of highly arsenic-doped silicon nanowires - Tom Mauersberger, NaMLab gGmbH, Center for Advancing Electronics Dresden - Imad Ibrahim, Center for Advancing Electronics Dresden, Chair for Nanoelectronic Materials - André Heinzig, Chair for Nanoelectronic Materials, Center for Advancing Electronics Dresden - Thomas Mikolajick, NaMLab gGmbH, Center for Advancing Electronics Dresden, Chair for Nanoelectronic Materials - Walter M. Weber, Center for Advancing Electronics Dresden, NaMLab gGmbH
17:20-17:40 (20min)
› INVITED Paper: Steep-Slope Devices for Ultra-Low-Power Applications - Ru Huang, Peking University
09:00-09:40 (40min)
› Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors - Thibauld Cazimajou, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation - Thi Thu Thuy Nguyen, Laboratoire des matériaux et du génie physique - Maxime Legallais, Laboratoire des technologies de la microélectronique, Laboratoire des matériaux et du génie physique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation - Mireille MOUIS, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation - Céline Ternon, Laboratoire des technologies de la microélectronique, Laboratoire des matériaux et du génie physique - Gérard Ghibaudo, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation
09:40-10:00 (20min)
› Simulation of Si nanowire quantum-dot for quantum security application - Vihar Georgiev, University of Glasgow - Hamiton Carrillo-Nunez, University of Glasgow
10:00-10:20 (20min)
› Design and development of silicon-based 3D arrays of coupled Quantum Dots - YUN JI KIM, University Grenoble Alpes, CEA, LETI, MINATEC Campus - Benoit Bertrand, University Grenoble Alpes, CEA, LETI, MINATEC Campus - Louis Hutin, University Grenoble Alpes, CEA, LETI, MINATEC Campus - Silvano de Franceschi, CEA, INAC-PHELIQS, University Grenoble Alpes - Tristan Meunier, University Grenoble Alpes, Institute Néel - Maud Vinet, University Grenoble Alpes, CEA, LETI, MINATEC Campus
10:40-11:00 (20min)
› Wafer –scale, self -aligned graphene on silicon wafers for More than Moore applications - Francesca Iacopi, University of Technology Sydney - Neeraj Mishra, University of Technology Sydney - Aiswarya Pradeepkumar, University of Technology Sydney - Mojtaba Amjadi Pour, University of Technology Sydney - Patrick Rufangura, University of Technology Sydney - Zulfiqar Khan, University of Technology Sydney - John Boeckl, Air Force Research Laboratory - Kurt Gaskill, Naval Research Laboratory - Tadich Anton, Australian Synchrotron - Ryan Brock, Stanford University - Reinhold Dauskardt, Stanford University - Avi Bendavid, CSIRO - Matteo Bosi, CNR -IMEM - Salviati Giancarlo, CNR -IMEM - Giovanni Verzellesi, Universita di Modena e Reggio Emilia - Marcin Zielinski, NovaSiC - Han Ye, Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania - Robert Carpick, Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania
11:00-11:20 (20min)
› InAs Electron-Hole Bilayer LED - Gaurav Gupta, University of Twente [Netherlands] - Florian Mema, University of Twente [Netherlands] - Raymond J.E. Hueting, University of Twente [Netherlands]
11:20-11:40 (20min)
› New DG FeFET architecture with enhanced SS and non-hysteretic behaviour - Elena Gnani, University of Bologna
11:40-12:00 (20min)
› Modeling of Avalanche Photo-diodes featuring III-V binary and ternary semiconductor alloys - alessandro pilotto, DPIA University of Udine - camilla nichetti, Elettra-Sincrotrone Trieste S.C.p.A - pierpaolo palestri, DPIA University of Udine - matias antonelli, Elettra-Sincrotrone Trieste S.C.p.A - fulvia arfelli, University of Trieste - Giorgio Biasiol, IOM CNR, Laboratorio TASC - giuseppe cautero, Elettra-Sincrotrone Trieste S.C.p.A - francesco driussi, DPIA University of Udine - david esseni, DPIA University of Udine - Ralf Menk, Elettra-Sincrotrone Trieste S.C.p.A - Tereza Steinhartova, University of Trieste
14:00-14:20 (20min)
› Replacement Metal Gate InGaAs-OI FinFETs by Selective Epitaxy in Oxide Cavities - Clarissa Convertino, IBM Zurich Research Laboratory - Cezar Zota, IBM Zurich Research Laboratory - Heinz Schmid, IBM Zurich Research Laboratory - Daniele Caimi, IBM Zurich Research Laboratory - Marilyne Sousa, IBM Zurich Research Laboratory - Kirsten Moselund, IBM Zurich Research Laboratory - Lukas Czornomaz, IBM Zurich Research Laboratory
14:20-14:40 (20min)
› Improved Electrical Characteristics of SOI FinFET with HfO2/ZrO2/HfO2 Gate Stack - Yan-Lin Li, National Tsing Hua University - Kuei-Shu Chang-Liao, National Tsing Hua University - Dun-Bao Ruan, National Tsing Hua University - Shang-Hua Hsu, National Tsing Hua University - Bo-Xun Lu, National Tsing Hua University - Yu-Ting Kuo, National Tsing Hua University - Ying-Zhuang Chien, National Tsing Hua University - Kuan-Yu Lai, National Tsing Hua University
14:40-15:00 (20min)
› VO2 oscillators coupling for Neuromorphic Computation - Elisabetta Corti, IBM Zurich Research Laboratory - Bernd Gotsmann, IBM Zurich Research Laboratory - Kirsten Moselund, IBM Zurich Research Laboratory - Igor Stolichnov, Nanoelectronic Devices Laboratory EPFL - Adrian Mihai Ionescu, Nanoelectronic Devices Laboratory EPFL - Siegfried Karg, IBM Zurich Research Laboratory
15:00-15:20 (20min)
› Observation of Negative Transconductance in GaN Vertical Nanowire MOSFETs - Dong-Hyeok Son, Jung-Hee Lee, In Man Kang, Yong Soo Lee, Jun-Hyeok Lee, Jeong-Gil
15:40-16:00 (20min)
› Photodiode with Low Dark Current Built in Silicon-on-Insulator by Electrostatic Doping - jian liu, S. Cristoloveanu, A. Zaslavsky, J. Wan, XY. Cao
16:00-16:20 (20min)
› Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM - qi yanfei, AI University Research Centre (AI-URC), Xi'an Jiatong-Liverpool University, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, School of Electronic and Information Engineering, Xi'an Jiaotong University - Zhao Ce Zhou, Department of Electrical Engineering and Electronics, University of Liverpool, AI University Research Centre (AI-URC), Xi'an Jiatong-Liverpool University, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, School of Electronic and Information Engineering, Xi'an Jiaotong University - Zhao Chun, Department of Electrical Engineering and Electronics, University of Liverpool, AI University Research Centre (AI-URC), Xi'an Jiatong-Liverpool University, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University - Mitrovic Ivona, Department of Electrical Engineering and Electronics, University of Liverpool - Xu Wangying, College of Materials Science and Engineering, Shenzhen University - Yang Li, Department of Chemistry, University of Liverpool, Department of Chemistry, Xi'an Jiaotong-Liverpool University - Zongjie Shen, Department of Electrical Engineering and Electronics, University of Liverpool, AI University Research Centre (AI-URC), Xi'an Jiatong-Liverpool University, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University - He Jiahuan, Department of Electrical Engineering and Electronics, University of Liverpool, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University
16:20-16:40 (20min)
› Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM - Viktor Sverdlov, Institute for Microelectronics, TU Wien
16:40-17:00 (20min)
› Modeling of the bridge threshold voltage in A2RAM cell - FRANCOIS TCHEME WAKAM, CEA-LETI AND UGA - JORIS LACORD, CEA-LETI - Maryline Bawedin, IMEP-LAHC - SEBASTIEN MARTINIE, CEA-LETI - Sorin Cristoloveanu, IMEP-LAHC - Thierry Poiroux, CEA-LETI
17:00-17:20 (20min)
