Fully depleted silicon-on-insulator (FD-SOI) is gaining ground and setting technology standards across a number of new markets, such as IoT, automotive, 5G, AI, and edge computing, among others. FD-SOI offers remarkable transistor performance in terms of power, performance, area and cost tradeoffs (PPAC), making it possible to cover low-power to high-performance digital applications with a single technology platform. In high-data rate communications like RF and millimeter-wave devices in particular, FD-SOI delivers high-performance including numerous unique advantages making it most likely the fastest RF-CMOS technology on the market.

This technical workshop will cover the FD-SOI technology platform with a focus on its compatibility with RF & mmWave communications. Attendees will hear from notable FD-SOI leaders and experts from leading industry and research institutions presenting updates on key developments and building blocks across the semiconductor value chain. Topics will include circuit design, device fundamentals, simulation and characterization of RF devices, test, CMOS technology and substrate technologies enabling FD-SOI. In addition, the workshop will include an overview about how FD-SOI technology is benefiting current and future end user applications.

April 4th

Conference Center Maison Minatec

Registration: free of charge

To register please only send an email to  eurosoi_ulis_contact@minatec.grenoble-inp.fr