1-3 Apr 2019 Grenoble (France)

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Wednesday, April 3, 2019

09:00

10:00

11:00

12:00

13:00

14:00

15:00

16:00

17:00

›9:00 (1h20)

Session 4: Novel devices (Part 1)
Session Co-Chairs : J.-P. Raskin (UCLouvain, Belgium) & C. Maneux (Bordeaux Univ., France)

9:00 - 10:20 (1h20)

Session 4: Novel devices (Part 1)

Session Co-Chairs : J.-P. Raskin (UCLouvain, Belgium) & C. Maneux (Bordeaux Univ., France)

› INVITED Paper: Steep-Slope Devices for Ultra-Low-Power Applications - Ru Huang, Peking University 09:00-09:40 (40min)

› Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors - Thibauld Cazimajou, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation - Thi Thu Thuy Nguyen, Laboratoire des matériaux et du génie physique - Maxime Legallais, Laboratoire des technologies de la microélectronique, Laboratoire des matériaux et du génie physique, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation - Mireille MOUIS, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation - Céline Ternon, Laboratoire des technologies de la microélectronique, Laboratoire des matériaux et du génie physique - Gérard Ghibaudo, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation 09:40-10:00 (20min)

› Simulation of Si nanowire quantum-dot for quantum security application - Vihar Georgiev, University of Glasgow - Hamiton Carrillo-Nunez, University of Glasgow 10:00-10:20 (20min)

›10:20 (20min)

Coffee break

10:20 - 10:40 (20min)

Coffee break

›10:40 (1h20)

Session 4: Novel devices (Part 2)
Session Co-Chairs : J.-P. Raskin (UCLouvain, Belgium) & C. Maneux (Bordeaux Univ., France)

10:40 - 12:00 (1h20)

Session 4: Novel devices (Part 2)

Session Co-Chairs : J.-P. Raskin (UCLouvain, Belgium) & C. Maneux (Bordeaux Univ., France)

› Design and development of silicon-based 3D arrays of coupled Quantum Dots - YUN JI KIM, University Grenoble Alpes, CEA, LETI, MINATEC Campus - Benoit Bertrand, University Grenoble Alpes, CEA, LETI, MINATEC Campus - Louis Hutin, University Grenoble Alpes, CEA, LETI, MINATEC Campus - Silvano de Franceschi, CEA, INAC-PHELIQS, University Grenoble Alpes - Tristan Meunier, University Grenoble Alpes, Institute Néel - Maud Vinet, University Grenoble Alpes, CEA, LETI, MINATEC Campus 10:40-11:00 (20min)

› Wafer –scale, self -aligned graphene on silicon wafers for More than Moore applications - Francesca Iacopi, University of Technology Sydney - Neeraj Mishra, University of Technology Sydney - Aiswarya Pradeepkumar, University of Technology Sydney - Mojtaba Amjadi Pour, University of Technology Sydney - Patrick Rufangura, University of Technology Sydney - Zulfiqar Khan, University of Technology Sydney - John Boeckl, Air Force Research Laboratory - Kurt Gaskill, Naval Research Laboratory - Tadich Anton, Australian Synchrotron - Ryan Brock, Stanford University - Reinhold Dauskardt, Stanford University - Avi Bendavid, CSIRO - Matteo Bosi, CNR -IMEM - Salviati Giancarlo, CNR -IMEM - Giovanni Verzellesi, Universita di Modena e Reggio Emilia - Marcin Zielinski, NovaSiC - Han Ye, Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania - Robert Carpick, Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania 11:00-11:20 (20min)

› InAs Electron-Hole Bilayer LED - Gaurav Gupta, University of Twente [Netherlands] - Florian Mema, University of Twente [Netherlands] - Raymond J.E. Hueting, University of Twente [Netherlands] 11:20-11:40 (20min)

› New DG FeFET architecture with enhanced SS and non-hysteretic behaviour - Elena Gnani, University of Bologna 11:40-12:00 (20min)

›12:00 (2h)

Lunch

12:00 - 14:00 (2h)

Lunch

›14:00 (1h20)

Session 5: III-V semiconductors and memory-oriented materials (Part 1)
Session Co-Chairs : J.-P. Colinge (CEA, France) & S. Cristoloveanu (IMEP-LAHC, France)

14:00 - 15:20 (1h20)

Session 5: III-V semiconductors and memory-oriented materials (Part 1)

Session Co-Chairs : J.-P. Colinge (CEA, France) & S. Cristoloveanu (IMEP-LAHC, France)

› Modeling of Avalanche Photo-diodes featuring III-V binary and ternary semiconductor alloys - alessandro pilotto, DPIA University of Udine - camilla nichetti, Elettra-Sincrotrone Trieste S.C.p.A - pierpaolo palestri, DPIA University of Udine - matias antonelli, Elettra-Sincrotrone Trieste S.C.p.A - fulvia arfelli, University of Trieste - Giorgio Biasiol, IOM CNR, Laboratorio TASC - giuseppe cautero, Elettra-Sincrotrone Trieste S.C.p.A - francesco driussi, DPIA University of Udine - david esseni, DPIA University of Udine - Ralf Menk, Elettra-Sincrotrone Trieste S.C.p.A - Tereza Steinhartova, University of Trieste 14:00-14:20 (20min)

› Replacement Metal Gate InGaAs-OI FinFETs by Selective Epitaxy in Oxide Cavities - Clarissa Convertino, IBM Zurich Research Laboratory - Cezar Zota, IBM Zurich Research Laboratory - Heinz Schmid, IBM Zurich Research Laboratory - Daniele Caimi, IBM Zurich Research Laboratory - Marilyne Sousa, IBM Zurich Research Laboratory - Kirsten Moselund, IBM Zurich Research Laboratory - Lukas Czornomaz, IBM Zurich Research Laboratory 14:20-14:40 (20min)

› Improved Electrical Characteristics of SOI FinFET with HfO2/ZrO2/HfO2 Gate Stack - Yan-Lin Li, National Tsing Hua University - Kuei-Shu Chang-Liao, National Tsing Hua University - Dun-Bao Ruan, National Tsing Hua University - Shang-Hua Hsu, National Tsing Hua University - Bo-Xun Lu, National Tsing Hua University - Yu-Ting Kuo, National Tsing Hua University - Ying-Zhuang Chien, National Tsing Hua University - Kuan-Yu Lai, National Tsing Hua University 14:40-15:00 (20min)

› VO2 oscillators coupling for Neuromorphic Computation - Elisabetta Corti, IBM Zurich Research Laboratory - Bernd Gotsmann, IBM Zurich Research Laboratory - Kirsten Moselund, IBM Zurich Research Laboratory - Igor Stolichnov, Nanoelectronic Devices Laboratory EPFL - Adrian Mihai Ionescu, Nanoelectronic Devices Laboratory EPFL - Siegfried Karg, IBM Zurich Research Laboratory 15:00-15:20 (20min)

›15:20 (20min)

Coffee break

15:20 - 15:40 (20min)

Coffee break

›15:40 (1h40)

Session 5: III-V semiconductors and memory-oriented materials (Part 2)
Session Co-Chairs : J.-P. Colinge (CEA, France) & S. Cristoloveanu (IMEP-LAHC, France)

15:40 - 17:20 (1h40)

Session 5: III-V semiconductors and memory-oriented materials (Part 2)

Session Co-Chairs : J.-P. Colinge (CEA, France) & S. Cristoloveanu (IMEP-LAHC, France)

› Observation of Negative Transconductance in GaN Vertical Nanowire MOSFETs - Dong-Hyeok Son, Jung-Hee Lee, In Man Kang, Yong Soo Lee, Jun-Hyeok Lee, Jeong-Gil 15:40-16:00 (20min)

› Photodiode with Low Dark Current Built in Silicon-on-Insulator by Electrostatic Doping - jian liu, S. Cristoloveanu, A. Zaslavsky, J. Wan, XY. Cao 16:00-16:20 (20min)

› Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM - qi yanfei, AI University Research Centre (AI-URC), Xi'an Jiatong-Liverpool University, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, School of Electronic and Information Engineering, Xi'an Jiaotong University - Zhao Ce Zhou, Department of Electrical Engineering and Electronics, University of Liverpool, AI University Research Centre (AI-URC), Xi'an Jiatong-Liverpool University, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, School of Electronic and Information Engineering, Xi'an Jiaotong University - Zhao Chun, Department of Electrical Engineering and Electronics, University of Liverpool, AI University Research Centre (AI-URC), Xi'an Jiatong-Liverpool University, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University - Mitrovic Ivona, Department of Electrical Engineering and Electronics, University of Liverpool - Xu Wangying, College of Materials Science and Engineering, Shenzhen University - Yang Li, Department of Chemistry, University of Liverpool, Department of Chemistry, Xi'an Jiaotong-Liverpool University - Zongjie Shen, Department of Electrical Engineering and Electronics, University of Liverpool, AI University Research Centre (AI-URC), Xi'an Jiatong-Liverpool University, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University - He Jiahuan, Department of Electrical Engineering and Electronics, University of Liverpool, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University 16:20-16:40 (20min)

› Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM - Viktor Sverdlov, Institute for Microelectronics, TU Wien 16:40-17:00 (20min)

› Modeling of the bridge threshold voltage in A2RAM cell - FRANCOIS TCHEME WAKAM, CEA-LETI AND UGA - JORIS LACORD, CEA-LETI - Maryline Bawedin, IMEP-LAHC - SEBASTIEN MARTINIE, CEA-LETI - Sorin Cristoloveanu, IMEP-LAHC - Thierry Poiroux, CEA-LETI 17:00-17:20 (20min)

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