1-3 Apr 2019 Grenoble (France)

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Monday, April 1, 2019

12:00

13:00

14:00

15:00

16:00

17:00

18:00

19:00

20:00

›12:00 (1h45)

Registration

12:00 - 13:45 (1h45)

Registration

Welcome desk

›13:45 (15min)

Welcome Address
Prof. Jean-Pierre Colinge

13:45 - 14:00 (15min)

Welcome Address

Prof. Jean-Pierre Colinge

›14:00 (1h40)

Session 1: Advanced transistor architectures (Part 1)
Session Co-Chairs : C. Fenouillet-Beranger (CEA-LETI, France) & J. A. Martino (University of Sao Paulo, Brazil)

14:00 - 15:40 (1h40)

Session 1: Advanced transistor architectures (Part 1)

Session Co-Chairs : C. Fenouillet-Beranger (CEA-LETI, France) & J. A. Martino (University of Sao Paulo, Brazil)

› INVITED Paper: Nanowire/sheet-FETs for ultra-scaled, high-density logic and memory applications - Anabela Veloso, IMEC 14:00-14:40 (40min)

› Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs - Bogdan Cretu, Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen 14:40-14:20 (-1h-20)

› Impact Of Inter-Tier Coupling On Static And Noise Performance in 3D Sequential Integration Technology - Petros SIDERIS, Laboratoire d'Electronique et des Technologies de l'Information, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation 15:00-15:20 (20min)

› Improved Performance of InGaAs-on-Insulator MOSFETs on Si Using Optimized Annealing Schemes - Cezar Zota, IBM Zurich Research Laboratory 15:20-15:40 (20min)

›15:40 (20min)

Coffee break

15:40 - 16:00 (20min)

Coffee break

›16:00 (2h)

Session 1: Advanced transistor architectures (Part 2)
Session Co-Chairs : C. Fenouillet-Beranger (CEA-LETI, France) & J. A. Martino (University of Sao Paulo, Brazil)

16:00 - 18:00 (2h)

Session 1: Advanced transistor architectures (Part 2)

Session Co-Chairs : C. Fenouillet-Beranger (CEA-LETI, France) & J. A. Martino (University of Sao Paulo, Brazil)

› Vertical Heterojunction Ge0.92Sn0.08/Ge Gate-All-Around Nanowire pMOSFETs - Mingshan Liu, Forschungszentrum Jülich - Konstantin Mertens, Forschungszentrum Jülich - Nils Driesch, JARA-Institute Green IT, RWTH Aachen University, Forschungszentrum Jülich - Thomas Grap, RWTH Aachen University - stefan Trellenkamp, Helmholtz Nano Facility (HNF) - Jean-Michel Hartmann, CEA, LETI and University of Grenoble Alpes - Joachim Knoch, RWTH Aachen University - Dan Buca, Forschungszentrum Jülich - Qing-Tai Zhao, Forschungszentrum Jülich 16:00-16:20 (20min)

› In-situ thermal assist recovery thanks to active silicide source on NMOS transistor in FD-SOI technology - Philippe Galy, Stmicroelectronics 16:20-16:40 (20min)

› Optimization of GAA vertical nanowire performance for logic application - Terirama Thingujam, Jung-Hee Lee, In Man Kang, Yong Soo Lee, Jeong-Gil Kim, Dong-Hyeok Son 16:40-17:00 (20min)

› Thin Si channel Back Enhanced (BE) SOI pMOSFET photodetector under different bias conditions - José Augusto Padovese, University of Sao Paulo - Ricardo Cardoso Rangel, University of Sao Paulo - Kátia Regina Akemi Sasaki, University of Sao Paulo - Joao Antonio Martino, University of Sao Paulo 17:00-17:20 (20min)

› Reverse recovery current in virtual diodes - Kyung Hwa Lee, IMEP-LAHC, Grenoble Institute of Technology - Maryline Bawedin, IMEP-LAHC, Grenoble Institute of Technology - Sorin Cristoloveanu, IMEP-LAHC, Grenoble Institute of Technology 17:20-17:40 (20min)

› Thin film BIMOS transistor for low power spiking neuron cell in 28nm FD-SOI CMOS technology - Philippe Galy, Stmicroelectronics 17:40-18:00 (20min)

›18:00 (2h)

Poster Session and Cocktail
Session Co-Chairs : V. Sverdlov (TU Wien, Autria) & C. Sampedro (UGR, Spain)

18:00 - 20:00 (2h)

Poster Session and Cocktail

Session Co-Chairs : V. Sverdlov (TU Wien, Autria) & C. Sampedro (UGR, Spain)

› A 400 mV, wide band-VCO with the central Frequency of 10.5 GHz and FTR of 2.4 GHz, designed in 22nm FDSOI CMOS - Piyush Kumar, piyush Kumar 18:00-20:00 (2h)

› A fully automated RF measurement system enabling statistical analysis on 22nm FDSOI - Maximilian Jüttner, Hochschule für Technik und Wirtschaft [Dresden] - Tim Seiler, Hochschule für Technik und Wirtschaft [Dresden] - Luca Pirro, GLOBALFOUNDRIES Fab1 LLC&Co.KG - Michael Otto, GLOBALFOUNDRIES Fab1 LLC&Co.KG - Jan Hoentschel, GLOBALFOUNDRIES Fab1 LLC&Co.KG - Wilfried Klix, Hochschule für Technik und Wirtschaft [Dresden] - Roland Stenzel, Hochschule für Technik und Wirtschaft [Dresden] 18:00-20:00 (2h)

› Al/GO/Si/Al RRAM with Solution-processed GO dielectric at Low Fabrication Temperature - Zongjie Shen, AI University Research Centre (AI-URC) - Chun Zhao, AI University Research Centre (AI-URC) - Cezhou Zhao, AI University Research Centre (AI-URC) - Ivona Mitrovic, Department of Electrical Engineering and Electronics - Li Yang, AI University Research Centre (AI-URC) - Wangying Xu, College of Materials Science and Engineering - Eng Lim, AI University Research Centre (AI-URC) - Tian Luo, AI University Research Centre (AI-URC) - Yanbo Huang, AI University Research Centre (AI-URC) 18:00-20:00 (2h)

› Back-gate bias Effect on the MOSFET-C CMOS UTBB Performance by Circuit Simulations - joaquin alvarado, Centro de Investigación en Dispositivos Semiconductores [Puebla] 18:00-20:00 (2h)

› Benefits of matrix configuration to implement a SET-FET circuit based on vertical topology - Esteve Amat, Institute of Microelectronics of Barcelona - Fabian Klüpfel, Fraunhofer Institute for Integrated Systems and Device Technology - Joan Bausells, Institute of Microelectronics of Barcelona - Francesc Perez-Murano, Institute of Microelectronics of Barcelona 18:00-20:00 (2h)

› Comparaison of Dickson Voltage Rectifier Designed in FDSOI 28 nm and BiCMOS 55 nm - Mohamad AWAD, Institut de Microelectronique, Electromagnetisme et Photonique 18:00-20:00 (2h)

› Comparison of the leakage currents in power supply bulk and SOI transistors: calculations and experiment - Vladimir Popov, A.V. Rzhanov Institute of Semiconductor Physics - Ida Tyschenko, A.V. Rzhanov Institute of Semiconductor Physics 18:00-20:00 (2h)

› Controlling L-BTBT in the Ultra-short channel Nanowire Junctionless Accumulation FETs using Overlapping Gate-on-Drain - AAKASH KUMAR JAIN, Indian Institute of Technology Delhi - Gaurav Musalgaonkar, Indian Institute of Technology Delhi - Mamidala Jagadesh Kumar, Indian Institute of Technology Delhi 18:00-20:00 (2h)

› Coplanar Dual Gates Silicon-on-insulator based Ultra-sensitive Ion-Sensitive Field-Effect Transistors for Point-of-Care Biosensor platform - Park Jong Tae, Incheon National University 18:00-20:00 (2h)

› Design and Performance of Silicon Nanowire Micro Thermoelectric Generators - Yusaku Shiotsu, FIRST, Tokyo Institute of Technology 18:00-20:00 (2h)

› Design of New Piezoelectronic Transistors and Their Ultralow-Voltage SRAM Application - Yusaku Shiotsu, Tokyo Institute of Technology - Shuu'ichirou Yamamoto, Tokyo Institute of Technology - Hiroshi Funakubo, Tokyo Institute of Technology - Minoru Kuribayashi Kurosawa, Tokyo Institute of Technology - Satoshi Sugahara, Tokyo Institute of Technology 18:00-20:00 (2h)

› Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation - Tianshi Zhao, University of Liverpool, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University - Chun Zhao, Department of Electrical Engineering and Electronics, University of Liverpool, AI University Research Centre (AI-URC), Xi'an Jiatong-Liverpool University, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University - Cezhou Zhao, University of Liverpool, AI University Research Centre (AI-URC) - Wangying Xu, Shenzhen Univerisity [Shenzhen] - Li Yang, Department of Chemistry, Xi'an Jiaotong-Liverpool University, Department of Chemistry, University of Liverpool - Ivona Mitrovic, Department of Electrical Engineering and Electronics, University of Liverpool - Steven Hall, Department of Electrical Engineering and Electronics, University of Liverpool - Enggee Lim, AI University Research Centre (AI-URC), University of Liverpool, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University - Shuichang Yu, Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Department of Electrical Engineering and Electronics, University of Liverpool 18:00-20:00 (2h)

› Effective Reduction of the Programing Pulse Width in Al:HfO2-based RRAM Arrays - Óscar González, Universidad de Valladolid [Department of Electronics] - Eduardo Pérez, IHP GmbH - Leibniz Institute for Innovative Microelectronics - Christian Wenger, Brandenburg Medical School, IHP GmbH - Leibniz Institute for Innovative Microelectronics - Salvador Dueñas, Universidad de Valladolid [Department of Electronics] - Helena Castán, Universidad de Valladolid [Department of Electronics] - Héctor García, Universidad de Valladolid [Department of Electronics] 18:00-20:00 (2h)

› Encapsulation of mTEGs for on-body energy harvesting - Antonino Proto, Department of Cybernetics and Biomedical Engineering, VSB-TUO - Jan Jargus, Department of Telecommunications, VSB-TUO - Lukas Peter, Department of Cybernetics and Biomedical Engineering, VSB-TUO - Marek Penhaker, Department of Cybernetics and Biomedical Engineering, VSB-TUO 18:00-20:00 (2h)

› Equivalent Length Concept for Compact Modeling of Short-Channel GAA and DG MOSFETs - Kerim Yilmaz, TH Mittelhessen University of Applied Sciences - Ghader Darbandy, TH Mittelhessen University of Applied Sciences - Benjamin Iniguez, Universitat Rovira i Virgili - Francois Lime, Universitat Rovira i Virgili - Alexander Kloes, TH Mittelhessen University of Applied Sciences 18:00-20:00 (2h)

› Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology - Renan Lethiecq, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation, Stmicroelectronics - Maryline Bawedin, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation - Philippe Galy, Institut Interdisciplinaire dÍnnovation Technologique, Stmicroelectronics 18:00-20:00 (2h)

› First Principle Simulations of Current Flow in Inorganic Molecules: Polyoxometalates (POMs) - Paven Mathew, Center of Micro/Nano Manufacturing Technology 18:00-20:00 (2h)

› Improved Performance of MoS2 Transistors via Dual-gate and Electrostatically-doped Contacts - Fuyou Liao, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University - Yin Wang, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University - Lingyi Zong, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University - Zhongxun Guo, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University - Jing Wan, State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University - Wenzhong Bao, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University 18:00-20:00 (2h)

› InGaN/Si Hetero-Junction Tandem Solar Cell with Self Tunneling Effect: Proposal & Analysis - Nakka Laxmi, Indian Institute Information Technology Design and Manufacturing Kancheepuram - S R Routray, SRM Institute of Science and Technology - K P Pradhan, Indian Institute Information Technology Design and Manufacturing Kancheepuram 18:00-20:00 (2h)

› Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications - Tim Seiler, Hochschule für Technik und Wirtschaft [Dresden] - Maximilian Jüttner, Hochschule für Technik und Wirtschaft [Dresden] - Tom Herrmann, Globalfoundries - Alban Zaka, Globalfoundries - Luca Pirro, Globalfoundries - Jan Hoentschel, Globalfoundries - Wilfried Klix, Hochschule für Technik und Wirtschaft [Dresden] - Roland Stenzel, Hochschule für Technik und Wirtschaft [Dresden] 18:00-20:00 (2h)

› Lowering the Dark Count Rate of SPAD Implemented in CMOS FDSOI Technology - Tulio CHAVES DE ALBUQUERQUE, Institut des Nanotechnologies de Lyon - Site de l'INSA 18:00-20:00 (2h)

› New material design of fast switching phase change memory as the benchmark for FD-SOI devices - yongtae kim, Semiconductor Materials and Devices Lab 18:00-20:00 (2h)

› Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor - Carlos Augusto Bergfeld Mori, University of Sao Paulo 18:00-20:00 (2h)

› Pure boron monolayer to boost A2RAM performance - FRANCOIS TCHEME WAKAM, CEA-LETI AND UGA - JORIS LACORD, CEA-LETI - Maryline Bawedin, IMEP-LAHC - SEBASTIEN MARTINIE, CEA-LETI - Sorin Cristoloveanu, IMEP-LAHC - Thierry Poiroux, CEA-LETI 18:00-20:00 (2h)

› Rebound effect on Charged Based Bio-TFETs for different biomolecules - Christian Macambira, University of São Paulo - Paula Agopian, São Paulo State University - Joao Antonio Martino, University of Sao Paulo 18:00-20:00 (2h)

› Reliable operation of Z2-FET memory matrix without selector - yongtae kim, Semiconductor Materials and Devices Lab 18:00-20:00 (2h)

› Room-Temperature Anodic Oxidation of Siliocn-on-Insulator Structures Produced by Hydrogen Transfer - Ida Tyschenko, A.V. Rzhanov Institute of Semiconductor Physics - Igor Popov, A.V. Rzhanov Institute of Semiconductor Physics - Evgenij Spesivtsev, A.V. Rzhanov Institute of Semiconductor Physics - Vladimir Popov, A.V. Rzhanov Institute of Semiconductor Physics 18:00-20:00 (2h)

› Scaling Aspects of Nanowire Schottky Junction based Reconfigurable Field Effect Transistors - Tim Baldauf, University of Applied Sciences Dresden [HTW-Dresden] - André Heinzig, NaMLab gGmbH [Dresden], Chair of Nanoelectronic Materials [TU Dresden], Center for Advancing Electronics Dresden (CfAED) [TU Dresden] - Thomas Mikolajick, Center for Advancing Electronics Dresden (CfAED) [TU Dresden], Chair of Nanoelectronic Materials [TU Dresden], NaMLab gGmbH [Dresden] - Walter Michael Weber, NaMLab gGmbH [Dresden], Chair of Nanoelectronic Materials [TU Dresden], Center for Advancing Electronics Dresden (CfAED) [TU Dresden] 18:00-20:00 (2h)

› Series Resistance Effects on the Back-gate Biased Operation of Junctionless Transistors - Dae-Young Jeon, KIST Jeonbuk - So Jeong Park, Korea University [Seoul] - Mireille MOUIS, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation - Sylvain Barraud, Laboratoire dÉlectronique et des Technologies de l'Information - Gyu-Tae Kim, Korea University [Seoul] - Gérard Ghibaudo, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation 18:00-20:00 (2h)

› Simple method for determining channel doping concentration of highly doped FD-SOI devices - So Jeong Park, Korea University - Dae-Young Jeon, KIST Jeonbuk - Gyu-Tae Kim, Korea University [Seoul] 18:00-20:00 (2h)

› Simulations of Surface Transfer Doping of Hydrogenated Diamond by MoO3 metal oxide - Vihar Georgiev, University of Glasgow 18:00-20:00 (2h)

› TCAD Analysis of III-V capacitor-less A2RAM cells - Carlos Navarro, University of Granada - Santiago Navarro, University of Granada - Carlos Marquez, University of Granada - Francisco Gamiz, University of Granada 18:00-20:00 (2h)

› TCAD Simulation of Total Ionizing Dose Response on DSOI nMOSFET - Yang Huang, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Binhong Li, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Sorin Cristoloveanu, CNRS, IMEP - INP Grenoble MINATEC - Bo Li, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Chen Shen, Cogenda Corporation - Yanfu Song, Cogenda Corporation - Lei Wang, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Duoli Li, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Hainan Liu, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Zhengsheng Han, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences - Jiajun Luo, Key Laboratory of Silicon Device Technology, Institute of Microelectronics Chinese Academy of Sciences 18:00-20:00 (2h)

› The effect of a damaged surface layer on the conductivity of Si nanowires made by direct plasma etching on SOI wafer - Andrey Miakonkikh, Valiev Institute of Physics and Technology of Russian Academy of Sciences - Konstantin Rudenko, Valiev Institute of Physics and Technology of Russian Academy of Sciences - Alexander Rogozhin, Valiev Institute of Physics and Technology of Russian Academy of Sciences - Andrey Tatarintsev, Valiev Institute of Physics and Technology of Russian Academy of Sciences 18:00-20:00 (2h)

› Ultra-thin HfAlO Nanofilms on Graphene Directly Deposited by Atomic Layer Deposition - Liu Shaoyu, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - LI ZHENG, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - Cheng Xinhong, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - Zhang Dongliang, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - Zhou Wen, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - Liu Xiaobo, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences - Yu Yuehui, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 18:00-20:00 (2h)

› Vertical nanowire-based FET modelling and electrical optimization - Alberto del Moral, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC) - Esteve Amat, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC) - Joan Bausells, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC) - Francesc Perez-Murano, Institute of Microelectronics of Barcelona (IMB-CNM, CSIC) 18:00-20:00 (2h)

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