EUROSOI-ULIS 2019 - Sciencesconf.org

›9:00 (1h20)

Session 2: Advanced materials (Part 1)
Session Co-Chairs : Y. T. Kim (KIST, Korea) & P. Palestri (University of Udine, Italy)

9:00 - 10:20 (1h20)

Session 2: Advanced materials (Part 1)

Session Co-Chairs : Y. T. Kim (KIST, Korea) & P. Palestri (University of Udine, Italy)

› INVITED Paper: SOI Technology: From Niche to Mainstream Applications - Ionut Radu, SOITEC 09:00-09:40 (40min)

› Effect of reduced oxygen partial pressure SiGe condensation for the fabrication of ultra-thin SGOI substrates - Damien Valenducq, Grenoble Institute of Engineering, STMicroelectronics [Crolles] - Olivier Gourhant, STMicroelectronics [Crolles] - Elisabeth Blanquet, Grenoble Institute of Engineering - Fabien Deprat, STMicroelectronics [Crolles] - Francesco Abbate, STMicroelectronics [Crolles] - Veronique Guyader, STMicroelectronics [Crolles] - Sebastien Pelissier, STMicroelectronics [Crolles] - Denis Rouchon, Commissariat à l\'Énergie Atomique et aux Énergies Alternatives (CEA) - Grenoble 09:40-10:00 (20min)

› UTBOX SOI Structures with High-k Stacks of Hafnia and Alumina - Vladimir Popov, Rzhanov Institute of Semiconductor Physics SB RAS - Vladimir Vdovin, Rzhanov Institute of Semiconductor Physics - Anton Gutakovski, Rzhanov Institute of Semiconductor Physics 10:00-10:20 (20min)

›10:20 (20min)

Coffee break

10:20 - 10:40 (20min)

Coffee break

›10:40 (1h20)

Session 2: Advanced materials (Part 2)
Session Co-Chairs : Y.T. Kim (KIST, Korea)

10:40 - 12:00 (1h20)

Session 2: Advanced materials (Part 2)

Session Co-Chairs : Y.T. Kim (KIST, Korea)

› Behavior of Gold-Doped Silicon Substrate under Small- and Large-RF Signal - Massinissa Nabet, Institute of Information and Communication Technologies, Electronics and Applied Mathematics - Martin Rack, Institute of Information and Communication Technologies, Electronics and Applied Mathematics - C. H. (Kees) de Groot, School of Electronics and Computer Science - Jean-Pierre Raskin, Institute of Information and Communication Technologies, Electronics and Applied Mathematics 10:40-11:00 (20min)

› Fully Solution-Processed Sodium Doped ZnO Thin-Film Transistors via a Low-Temperature Aqueous Route - Qihan Liu, University of Liverpool - Chun Zhao, AI University Research Centre (AI-URC), University of Liverpool - Cezhou Zhao, AI University Research Centre (AI-URC), University of Liverpool - Ivona Mitrovic, University of Liverpool - Steven Hall, University of Liverpool - Wangying Xu, Shenzhen University [Shenzhen] - Li Yang, University of Liverpool - Eng Lim, University of Liverpool 11:00-11:20 (20min)

› Post-process porous silicon for 5G applications - Gilles Scheen, Université Catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics 11:20-11:40 (20min)

› Ni,Pt, and Ti Stanogermanide formation on Ge0.92Sn0.08 - Emmanuele Galluccio, Tyndall National Insitute - Gioele Mirabelli, Tyndall National Institute - Dan O'Connell, Tyndall National Institute - Jessica Doherty, School of Chemistry University College Cork - Nikolay Petkov, Cork Institute of Technology - Shih-Ya Lin, National Taiwan University - Fang-Liang Lu, National Taiwan University - Chee Wee Liu, National Taiwan University - Ray Duffy, Tyndall National Institute - Justin Holmes, Trinity College Dublin, School of Chemistry University College Cork 11:40-12:00 (20min)

›12:00 (2h)

Lunch

12:00 - 14:00 (2h)

Lunch

›14:00 (1h40)

Session 3: Characterization techniques and reliability assessment techniques (Part 1)
Session Co-Chairs : V. Kilchytska (UCLouvain, Belgium) & C. Theodorou (IMEP-LAHC)

14:00 - 15:40 (1h40)

Session 3: Characterization techniques and reliability assessment techniques (Part 1)

Session Co-Chairs : V. Kilchytska (UCLouvain, Belgium) & C. Theodorou (IMEP-LAHC)

› INVITED Paper: Radiation Effects in Innovative Devices - Marc Gaillardin, CEA-DIF 14:00-14:40 (40min)

› Back-bias impact on variability and BTI for 3D-monolithic 14nm FDSOI SRAMs applications - Daphnée Bosch, Laboratoire d'Electronique et des Technologies de l'Information - JORIS LACORD, CEA-LETI 14:40-15:00 (20min)

› Pseudo-MOSFET response to transient ramp signal applied to the gate - Miltiadis ALEPIDIS, IMEP-LAHC - Maryline Bawedin, IMEP-LAHC - Irina IONICA, IMEP-LAHC 15:00-15:20 (20min)

› RF characterization and small extraction on 22 nm CMOS fully-depleted SOI technology - Ousmane Kane, CEA leti - Luca Lucci, CEA leti - Pascal Scheiblin, CEA leti - Sylvie Lepilliet, IEMN - Francois Danneville, IEMN 15:20-15:40 (20min)

›15:40 (20min)

Coffee break

15:40 - 16:00 (20min)

Coffee break

›16:00 (1h40)

Session 3: Characterization techniques and reliability assessment techniques (Part 2)
Session Co-Chairs : V. Kilchytska (UCLouvain, Belgium) & C. Theodorou (IMEP-LAHC)

16:00 - 17:40 (1h40)

Session 3: Characterization techniques and reliability assessment techniques (Part 2)

Session Co-Chairs : V. Kilchytska (UCLouvain, Belgium) & C. Theodorou (IMEP-LAHC)

› Robust Methodology for Low-Frequency Noise Power Analyses in Advanced MOS Transistors - Léopold Van Brandt, ICTEAM, Université catholique de Louvain 16:00-16:20 (20min)

› New Methodology For Series-Resistance-Immune MOSFET Parameter Extraction From Linear To Saturation Region - Theano Karatsori, IMEP-LAHC, Univ. Grenoble Alpes, - Kamal Bennamane, University of M. Mammeri, Tizi-Ouzou, Algeria - Gérard Ghibaudo, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation 16:20-16:40 (20min)

› RF Characterization of 28 nm FD-SOI Transistors Up To 220 GHz - Marina DENG, Laboratoire de l'intégration, du matériau au système - Sébastien Fregonese, Laboratoire de l'intégration, du matériau au système - Benjamin Dormieu, STMicroelectronics (Crolles) - Patrick Scheer, STMicroelectronics (Crolles) - Magali De Matos, Laboratoire de l'intégration, du matériau au système - Thomas Zimmer, Laboratoire de l'intégration, du matériau au système 16:40-17:00 (20min)

› gm/ID-derivative Method for Threshold Voltage Extraction in Junctionless MOSFETs - Alexei Nazarov, Lashkaryov Institute of Semiconductor Physics NASU 17:00-17:20 (20min)

› Electrical characterization and size effect of highly arsenic-doped silicon nanowires - Tom Mauersberger, NaMLab gGmbH, Center for Advancing Electronics Dresden - Imad Ibrahim, Center for Advancing Electronics Dresden, Chair for Nanoelectronic Materials - André Heinzig, Chair for Nanoelectronic Materials, Center for Advancing Electronics Dresden - Thomas Mikolajick, NaMLab gGmbH, Center for Advancing Electronics Dresden, Chair for Nanoelectronic Materials - Walter M. Weber, Center for Advancing Electronics Dresden, NaMLab gGmbH 17:20-17:40 (20min)

›19:00 (4h)

Banquet

19:00 - 23:00 (4h)

Banquet